Abstract
We have analyzed and systematized available data on silicon whisker growth with the use of a wide variety of metal solvents. The catalytic properties of metals responsible for stable Si whisker growth are shown to depend on the position of the metal in the Periodic Table, the interaction between the molten metal and silicon, and the number of electrons in the s and (n − 1)d electron orbitals of the metal. The most stable silicon whisker growth is ensured by Cu, Au, Ni, Ag, Pd, and Pt particles.
Similar content being viewed by others
References
Thelander, C., Nanowire-Based One-Dimensional Electronics, Mater. Today, 2006, vol. 9, no. 10, pp. 28–35.
Schwarz, K.W. and Tersoff, J., From Droplets to Nanowires: Dynamics of Vapour-Liquid-Solid Growth, Phys. Rev. Lett., 2009, no. 102, paper 206 101.
Schmidt, V., Senz, S., and Gosele, U., The Shape of Epitaxially Grown Silicon Nanowires and the Influence of Line Tension, J. Appl. Phys., 2005, vol. 80, pp. 445–450.
Givargizov, E.I., Rost nitevidnykh i plastinchatykh kristallov iz para (Vapor Growth of Whiskers and Platelike Crystals), Moscow: Nauka, 1977.
Nebol’sin, V.A. and Shchetinin, A.A., A Mechanism of Quasi-One-Dimensional Vapor Phase Growth of Si and GaP Whiskers, Inorg. Mater., 2008, vol. 44, no. 10, pp. 1033–1040.
Nebol’sin, V.A. and Shchetinin, A.A., Rost nitevidnykh kristallov (Whisker Growth), Voronezh: Voronezh. Gos. Univ., 2003.
Gorelik, S.S. and Dashevskii, M.Ya., Materialovedenie poluprovodnikov i dielektrikov (Semiconductor and Dielectric Materials Research), Moscow: Metallurgiya, 1988.
Glazov, V.M. and Zemskov, V.S., Fiziko-khimicheskie osnovy legirovaniya poluprovodnikov (Physicochemical Principles of Semiconductor Doping), Moscow: Nauka, 1967.
Naidich, Yu.V., Kontaktnye yavleniya v metallicheskikh rasplavakh (Contact Phenomena in Metallic Melts), Kiev: Naukova Dumka, 1972.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Nebol’sin, M.A. Zavalishin, E.V. Zotova, A.N. Korneeva, V.P. Gorshunova, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 1, pp. 5–10.
Rights and permissions
About this article
Cite this article
Nebol’sin, V.A., Zavalishin, M.A., Zotova, E.V. et al. Effect of the electronic structure of metal solvents on silicon whisker growth. Inorg Mater 48, 1–6 (2012). https://doi.org/10.1134/S0020168511120132
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168511120132