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Photoelectric properties of TlIn0.98Pr0.02Se2 crystals and resistors

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Abstract

It is shown that heat treatment and uniaxial compression along the [001] axis increase the photosensitivity of TlIn0.98Pr0.02Se2 crystals and markedly shift their photosensitivity range to longer wavelengths.

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References

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Authors and Affiliations

  1. Azerbaijani Technical University, pr. Javida 25, Baku, AZ1073, Azerbaijan

    E. M. Gojaev & E. A. Allakhyarov

  2. Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan

    A. M. Nazarov

Authors
  1. E. M. Gojaev
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  2. A. M. Nazarov
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  3. E. A. Allakhyarov
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Correspondence to A. M. Nazarov.

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Original Russian Text © E.M. Gojaev, A.M. Nazarov, E.A. Allakhyarov, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 12, pp. 1438–1441.

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Gojaev, E.M., Nazarov, A.M. & Allakhyarov, E.A. Photoelectric properties of TlIn0.98Pr0.02Se2 crystals and resistors. Inorg Mater 47, 1311–1313 (2011). https://doi.org/10.1134/S0020168511120053

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  • DOI: https://doi.org/10.1134/S0020168511120053

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