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Growth, surface morphology, and band structure of InGaTe2 single crystals

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Abstract

We report the synthesis and crystal growth of InGaTe2. The crystals were characterized by X-ray diffraction, and their surface morphology was studied by atomic force microscopy. The band structure of InGaTe2 has been calculated by the pseudopotential method, and the optical functions and electron and hole effective masses of InGaTe2 have been determined.

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Authors and Affiliations

  1. Azerbaijani Technical University, pr. Javida 25, Baku, AZ1073, Azerbaijan

    E. M. Gojaev, Z. A. Jakhangirli, E. A. Allakhyarov, D. M. Kafarova & A. R. Ibragimova

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  1. E. M. Gojaev
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  2. Z. A. Jakhangirli
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  3. E. A. Allakhyarov
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  4. D. M. Kafarova
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  5. A. R. Ibragimova
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Correspondence to E. M. Gojaev.

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Original Russian Text © E.M. Gojaev, Z.A. Jakhangirli, E.A. Allakhyarov, D.M. Kafarova, A.R. Ibragimova, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 10, pp. 1162–1165.

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Gojaev, E.M., Jakhangirli, Z.A., Allakhyarov, E.A. et al. Growth, surface morphology, and band structure of InGaTe2 single crystals. Inorg Mater 47, 1053–1056 (2011). https://doi.org/10.1134/S0020168511100062

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  • DOI: https://doi.org/10.1134/S0020168511100062

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