Skip to main content

Preparation of thermoelectric materials based on higher manganese silicide

Abstract

Rhenium-doped higher manganese silicide based materials have been prepared by hot pressing. It has been shown that the pressing temperature of the materials can be lowered by adding titanium as a reductant or by sonication during pressing. The average thermoelectric figure of merit of the materials in the temperature range 600–900 K is Z ≅ 0.7 × 10−3 K−1.

This is a preview of subscription content, access via your institution.

References

  1. Nikitin, E.N., Temperature-Dependent Electrical Conductivity and Thermoelectric Power of Silicides, Zh. Tekh. Fiz., 1958, vol. 28, no. 1, pp. 23–25.

    CAS  Google Scholar 

  2. Voronov, B.K., Dudkin, L.D., and Trusova, N.N., Anisotropy in the Thermoelectric Properties of Chromium Disilicide and Higher Manganese Silicide Single Crystals, Kristallografiya, 1967, vol. 12, no. 3, pp. 519–521.

    CAS  Google Scholar 

  3. Ivanova, L.D., Abrikosov, N.Kh., Elagina, E.I., and Khvostikova, V.D., Preparation and Properties of Higher Manganese Silicide Single Crystals, Izv. Akad. Nauk SSSR, Neorg. Mater., 1969, vol. 5, no. 11, pp. 1933–1937.

    CAS  Google Scholar 

  4. Nikitin, E.N., Tarasov, V.I., and Tamarin, P.V., Thermal, Electrical, and Structural Properties of Higher Manganese Silicide from 4.2 to 1300 K, Fiz. Tverd. Tela (Leningrad), 1969, vol. 11, no. 1, pp. 234–236.

    CAS  Google Scholar 

  5. Nikitin, E.N., Tarasov, V.I., Andreev, A.A., and Shumilova, L.N., Electrical Properties of Single-Crystal Higher Manganese Silicide, Fiz. Tverd. Tela (Leningrad), 1969, vol. 11, no. 11, pp. 3389–3392.

    CAS  Google Scholar 

  6. Kawasumi, I., Sakata, M., Nishida, I., and Masumoto, K., Crystal Growth of Manganese Silicide, MnSi∼1.73 and Semiconducting Properties of Mn15Si26, J. Mater. Sci., 1981, vol. 16, pp. 355–366.

    Article  CAS  Google Scholar 

  7. Abrikosov, N.Kh., Ivanova, L.D., and Gromova, L.V., Effective Cr, Fe, and Ge Distribution Coefficients in Higher Manganese Silicide, Izv. Akad. Nauk SSSR, Neorg. Mater., 1972, vol. 9, no. 3, pp. 489–491.

    Google Scholar 

  8. Abrikosov, N.Kh., Ivanova, L.D., and Murav’ev, V.G., Crystal Growth and Properties of Solid Solutions of Higher Manganese Silicide with Ge and CrSi2, Izv. Akad. Nauk SSSR, Neorg. Mater., 1972, vol. 8, no. 7, pp. 1194–1200.

    CAS  Google Scholar 

  9. Abrikosov, N.Kh. and Ivanova, L.D., Properties of a Single-Crystal Solid Solution between Higher Manganese Silicide and FeSi2, Izv. Akad. Nauk SSSR, Neorg. Mater., 1972, vol. 9, no. 3, pp. 489–491.

    Google Scholar 

  10. Zaitsev, V.K., Thermoelectric Properties of Anisotropic MnSi1.72, CRC Handbook of Thermoelectrics, Rowe, D.M., Ed., New York: CRC, 1995, pp. 299–309.

    Google Scholar 

  11. Fedorov, M.I and Zaitsev, V.K, Thermoelectrics of Transition Metal Silicides, Thermoelectrics Handbook, Macro to Nano, Rowe, D.M., Ed., Boca Raton: CRC, 2005, section III, pp. 31.1–31.19.

    Google Scholar 

  12. Kaibe, H., Aoyama, I., and Sano, S., Company “Komatsu” and Its Activity, Presentation at XIII Int. Forum on Thermoelectricity, Kiev, 2009.

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to L. D. Ivanova.

Additional information

Original Russian Text © L.D. Ivanova, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 9, pp. 1065–1070.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Ivanova, L.D. Preparation of thermoelectric materials based on higher manganese silicide. Inorg Mater 47, 965 (2011). https://doi.org/10.1134/S002016851109010X

Download citation

  • Received:

  • Published:

  • DOI: https://doi.org/10.1134/S002016851109010X

Keywords

  • Rhenium
  • Thermoelectric Property
  • Thermoelectric Material
  • Thermoelectric Power
  • Mesh Sieve