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Phase transition and electrical properties of gallium- and indium-doped Bi10Ti3W3O30

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Abstract

Polycrystalline samples of gallium- and indium-doped Bi10Ti3W3O30 (mixed-layer Aurivillius phase with the Ti4+ and W6+ distributed at random over the perovskite-like slabs) have been prepared by solid-state reactions, and their polymorphism and electrical properties have been studied. Doping with both In3+ and Ga3+ yields limited solid solutions and shifts the ferroelectric phase transition to lower temperatures. The heterovalent substitutions of In3+ and Ga3+ for Ti4+ and W6+ increase the oxygen vacancy concentration and, accordingly, the conductivity of the material relative to the undoped compound.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119991, Russia

    E. P. Kharitonova, D. A. Belov & V. I. Voronkova

  2. Karpov Institute of Physical Chemistry (Russian State Scientific Center), ul. Vorontsovo pole 10, Moscow, 105064, Russia

    A. V. Mosunov

Authors
  1. E. P. Kharitonova
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  2. D. A. Belov
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  3. A. V. Mosunov
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  4. V. I. Voronkova
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Correspondence to V. I. Voronkova.

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Original Russian Text © E.P. Kharitonova, D.A. Belov, A.V. Mosunov, V.I. Voronkova, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 5, pp. 582–589.

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Kharitonova, E.P., Belov, D.A., Mosunov, A.V. et al. Phase transition and electrical properties of gallium- and indium-doped Bi10Ti3W3O30 . Inorg Mater 47, 513–520 (2011). https://doi.org/10.1134/S0020168511050116

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  • DOI: https://doi.org/10.1134/S0020168511050116

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