Abstract
We have studied the transport properties of silicon doped with manganese via low-temperature diffusion. The material exhibits colossal photoconductivity in the extrinsic region (1.5–3 μm), an abnormally high negative magnetoresistance, and a temperature variation of hole mobility atypical of silicon. The state of the manganese atoms has been probed by electron paramagnetic resonance spectroscopy and atomic force microscopy. The results are used to infer the structure of nanoclusters consisting of manganese atoms and to develop an approach to controlling the charge state and magnetic moment of the nanoclusters.
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References
Melvedskii, M.G and Chaldyshev, V.V., Atomic Nanoclusters in Semiconductors: A Novel Approach to Tailoring Materials Properties, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1998, vol. 32, no. 5, p. 515.
Ludwig, G.W., Woodbury, H.H., and Carlson, R.O., J. Phys. Chem. Solids, 1959, no. 8, p. 490.
Kreissl, J. and Gehlhoff, W., Electron Paramagnetic Resonance of the Cluster in Silicon, Phys. Status Solidi B, 1988, vol. 145, p. 609.
Fistul’, V.I., Kazakova, V.M., Bobrikov, Yu.A., et al., Fiz. Tekh. Poluprovodn. (Leningrad), 1982, vol. 16, no. 5, p. 939.
Askarov, Sh.I., Bakhadyrkhanov, M.K., Masterov, V.F., and Shtel’makh, V.F., EPR Study of Sulfur-Manganese Interaction in Silicon, Fiz. Tekh. Poluprovodn. (Leningrad), 1982, vol. 16, no. 7, pp. 1308–1310.
Bakhadyrkhanov, M.K., Boltaks, B.I., and Kulikov, G.S., Diffusion, Electrical Transport, and Solubility of Manganese in Silicon, Fiz. Tverd. Tela (Leningrad), 1972, vol. 14, pp. 1671–1676.
Bakhadyrkhanov, M.K., Iliev, Kh.M., Ayupov, K.S., and Sattorov, O.E., Magnetic Field Sensor Based on Compensated Silicon, Pis’ma Zh. Tekh. Fiz., 2003, vol. 29, no. 17, pp. 8–16.
Bakhadyrkhanov, M.K., Sattorov, O.E., Iliev, Kh.M., et al., Field- and Light-Enhanced Negative Magnetoresistance of Silicon Doped with Boron and Manganese, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2005, vol. 39, no. 7, pp. 823–825.
Demidov, E.S., Podol’skii, V.V., Lesnikov, V.P., et al., Laser Plasma Deposition of Nanolayers of Silicon-Based Diluted Magnetic Semiconductors and Heusler Alloys, Trudy konferentsii “Kremnii-2009” (Proc. Silicon-2009 Conf.), Novosibirsk, 2009, pp. 125–126.
Bakhadyrkhanov, M.K., Ayupov, K.S., Mavlonov, G.Kh., and Isamov, S.B., Negative Magnetoresistance of Silicon Containing [Mn]4 Clusters, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2010, vol. 44, no. 9, pp. 1181–1184.
Abdurakhmonov, K.P., Lebedev, A.A., Kreissl, J., and Utamuradova, Sh.B., Manganese-Related Deep Levels in Silicon, Fiz. Tekh. Poluprovodn. (Leningrad), 1985, vol. 19, no. 2, pp. 213–216.
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Original Russian Text © M.K. Bakhadyrkhanov, G.Kh. Mavlonov, S.B. Isamov, Kh.M. Iliev, K.S. Ayupov, Z.M. Saparniyazova, S.A. Tachilin, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 5, pp. 545–550.
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Bakhadyrkhanov, M.K., Mavlonov, G.K., Isamov, S.B. et al. Transport properties of silicon doped with manganese via low-temperature diffusion. Inorg Mater 47, 479–483 (2011). https://doi.org/10.1134/S0020168511050062
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DOI: https://doi.org/10.1134/S0020168511050062