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Effect of vapor phase composition on the properties of CVD 3C-SiC

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Abstract

We have studied the effect of silicon-enriched vapor phase composition, deposition temperature, and CH3SiCl3 precursor concentration on the microstructure, resistivity, and compressive strength of 3C-SiC layers and optimized the conditions for the growth of polycrystalline 3C-SiC layers possessing high resistivity and compressive strength.

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Authors and Affiliations

  1. Russian Research Centre Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182, Russia

    L. M. Ivanova, K. D. Demakov & M. N. Shakhov

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  1. L. M. Ivanova
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  2. K. D. Demakov
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  3. M. N. Shakhov
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Original Russian Text © L.M. Ivanova, K.D. Demakov, M.N. Shakhov, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 4, pp. 423–428.

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Ivanova, L.M., Demakov, K.D. & Shakhov, M.N. Effect of vapor phase composition on the properties of CVD 3C-SiC. Inorg Mater 47, 369–374 (2011). https://doi.org/10.1134/S0020168511040157

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  • DOI: https://doi.org/10.1134/S0020168511040157

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