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Wet chemical etching of the (111)In and \( \left( {\bar 1\bar 1\bar 1} \right) \)Sb planes of InSb substrates

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Abstract

This paper examines etching of the polar planes (111)In and \( \left( {\bar 1\bar 1\bar 1} \right) \)Sb of InSb wafers for liquid phase epitaxy in various etchants after mechanical and chemomechanical polishing. We describe procedures for polishing wafers and removing residual abrasive particles from the surface of polished wafers. A tartaric-acid-based etchant is shown to ensure a mirror-smooth finish of the \( \left( {\bar 1\bar 1\bar 1} \right) \)Sb surface, with no visible oxidation. Etching of the (111)In surface with a lactic-acid-based etchant produces planes inclined to the parent surface at an angle close to the misalignment angle between the surface and (111) plane.

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Authors and Affiliations

  1. Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan

    Sh. O. Eminov, Kh. D. Jalilova & E. A. Mamedova

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  1. Sh. O. Eminov
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  2. Kh. D. Jalilova
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  3. E. A. Mamedova
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Correspondence to Sh. O. Eminov.

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Original Russian Text © Sh.O. Eminov, Kh.D. Jalilova, E.A. Mamedova, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 4, pp. 394–398.

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Eminov, S.O., Jalilova, K.D. & Mamedova, E.A. Wet chemical etching of the (111)In and \( \left( {\bar 1\bar 1\bar 1} \right) \)Sb planes of InSb substrates. Inorg Mater 47, 340–344 (2011). https://doi.org/10.1134/S0020168511040091

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  • DOI: https://doi.org/10.1134/S0020168511040091

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