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Raman spectroscopy determination of carrier concentration in n-In x Ga1 − x As epitaxial films

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Abstract

We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-In x Ga1 − x As with n in the range 1017 to 1019 cm−3. The results indicate that the behavior of the high-frequency mode L + can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119992, Russia

    L. P. Avakyants

  2. OAO Optron, Shcherbakovskaya ul. 53, Moscow, 105318, Russia

    T. P. Kolmakova

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  1. L. P. Avakyants
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  2. T. P. Kolmakova
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Correspondence to L. P. Avakyants.

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Original Russian Text © L.P. Avakyants, T.P. Kolmakova, 2011, published in Neorganicheskie Materialy, 2011, Vol. 47, No. 4, pp. 389–393.

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Avakyants, L.P., Kolmakova, T.P. Raman spectroscopy determination of carrier concentration in n-In x Ga1 − x As epitaxial films. Inorg Mater 47, 335–339 (2011). https://doi.org/10.1134/S0020168511040029

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  • DOI: https://doi.org/10.1134/S0020168511040029

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