Abstract
The structure and topography of unoxidized and oxidized surfaces of Bi2Se3 layered crystals have been studied by X-ray diffraction and atomic force microscopy. Air oxidation at 450°C has been shown to lead to the formation of Bi2O3 film. The structure and unit-cell parameters of the semiconductor and oxide have been determined. The surface of cleaved unoxidized Bi2Se3 has been found to be covered with nanostructures in the form of “hillocks.” They range widely in lateral and vertical dimensions and are randomly distributed over the sample surface. The surface oxide nanostructures have the form of islands of arbitrary shape. The oxide crystallites form ridges up to 2000 nm in height.
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Original Russian Text © V.I. Ivanov, V.M. Katerynchuk, V.M. Kaminskii, Z.D. Kovalyuk, O.S. Lytvyn, I.V. Mintyanskii, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 12, pp. 1430–1432.
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Ivanov, V.I., Katerynchuk, V.M., Kaminskii, V.M. et al. Surface structure of unoxidized and oxidized Bi2Se3 crystals. Inorg Mater 46, 1296–1298 (2010). https://doi.org/10.1134/S0020168510120046
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DOI: https://doi.org/10.1134/S0020168510120046