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Deep donor center in Ge1 − x Si x 〈Cu,In,Sb〉 crystals at 1050–1080 K

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Abstract

Hall effect measurements demonstrate that quenching of Ge1 − x Si x 〈Cu,In,Sb〉 (0 ≤ x ≤ 0.20) multiply doped crystals from 1050–1080 K leads to the formation of additional deep donor centers. The energy level of the centers is located in the bottom half of the band gap of the Ge1 − x Si x crystals and is a linear function of host composition. Annealing the crystals at 550–570 K completely eliminates the additional donor levels. The most likely model of the additional deep donors is a pair of substitutional copper and indium atoms (CusIns) or a complex of a copper interstitial and a substitutional indium atom (CuiIns).

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References

  1. Milnes, A.G., Deep Impurities in Semiconductors, New York: Wiley, 1973.

    Google Scholar 

  2. Azhdarov, G.Kh., Kyazimzade, R.Z., and Hostut, M., Deep Impurity Levels in Ge-Si Alloys, Solid State Commun., 1999, vol. 111, pp. 675–679.

    Article  CAS  Google Scholar 

  3. Shklovskii, B.N. and Efros, A.L., Elektronnye svoistva legirovannykh poluprovodnikov (Electronic Properties of Doped Semiconductors), Moscow: Nauka, 1979.

    Google Scholar 

  4. Zakhrabekova, Z.M., Zeinalov, Z.M., Kyazimova, V.K., and Azhdarov, G.Kh., Segregation of Aluminum and Indium Impurities in Ge1 − x Six Crystals, Neorg. Mater., 2007, vol. 43, no. 1, pp. 5–9 [Inorg. Mater. (Engl. Transl.), vol. 43, no. 1, pp. 3–7].

    Article  Google Scholar 

  5. Azhdarov, G.Kh., Kucukomeroglu, T., Varilci, A., et al., Distribution of Components in Ge-Si Bulk Single Crystals Grown under the Continuous Feeding of the Melt with the Second Component (Si), J. Cryst. Growth, 2001, vol. 226, no. 4, pp. 437–442.

    Article  CAS  Google Scholar 

  6. Yonenaga, I., Czochralski Growth of Heavily Impurity Doped Crystals of GeSi Alloys, J. Cryst. Growth, 2001, vol. 226, no. 1, pp. 47–51.

    Article  CAS  Google Scholar 

  7. Abrosimov, N.V., Rossolenko, S.N., Thieme, W., et al., Czochralski Growth of Si- and Ge-Rich SiGe Single Crystals, J. Cryst. Growth, 1997, vol. 174, nos. 1–4, pp. 182–186.

    Article  CAS  Google Scholar 

  8. Marin, C. and Ostrogorsky, A.G., Growth of Ga-Doped Ge0.98Si0.02 by Vertical Bridgman with a Baffle, J. Cryst. Growth, 2000, vol. 211, pp. 378–383.

    Article  CAS  Google Scholar 

  9. Barz, A., Dold, P., Kerat, U., et al., Germanium-Rich SiGe Bulk Single Crystals Grown by the Vertical Bridgman Method and by Zone Melting, J. Vac. Sci. Technol., B., 1998, vol. 16, no. 3, pp. 1627–1630.

    Article  CAS  Google Scholar 

  10. Nakajima, K., Kodama, S., Miyashita, S., et al., Growth of Ge-Rich Ge1 − x Single Crystal with Uniform Composition (x = 0.02) on a Compositionally Graded Crystal for Use As GaAs Solar Cells, J. Cryst. Growth, 1999, vol. 205, no. 3, pp. 270–276.

    Article  CAS  Google Scholar 

  11. Azhdarov, G.Kh., Zeynalov, Z.M., and Huseynli, L.A., The Distribution of Ga and Sb Impurities in Ge-Si Crystals Grown by the Bridgman Method Using a Feeding Rod, Kristallografiya, 2009, vol. 54, no. 1, pp. 137–141 [Crystallogr. Rep. (Engl. Transl.), vol. 54, no. 1, pp. 152–156].

    Google Scholar 

  12. Kyazimova, V.K., Zeynalov, Z.M., Zakhrabekova, Z.M., and Azhdarov, G.Kh., Distribution of Aluminum and Indium Impurities in Crystals of Ge-Si Solid Solutions Grown from the Melt, Crystallogr. Rep., 2006, vol. 51,suppl. 1, pp. S192–S195.

    Article  CAS  Google Scholar 

  13. Fistul’, V.I. and Yakovenko, A.G., Decomposition of Supersaturated Solid Solutions As a Method for Precision Doping of Semiconductors, in Legirovanie poluprovodnikov (Doping of Semiconductors), Moscow: Metallurgiya, 1982.

    Google Scholar 

  14. Azhdarov, P.G., Copper-Related Deep Acceptor in Heat-Treated Ge1 − x Six Single Crystals, Neorg. Mater., 2000, vol. 36, no. 5, pp. 526–528 [Inorg. Mater. (Engl. Transl.), vol. 36, no. 5, pp. 426–428].

    Article  Google Scholar 

  15. Belokurova, I.N., Degtyarev, V.D., and Skudnova, E.D., Effect of Silicon on the Decomposition of Supersaturated Solid Solutions of Copper in Germanium, Izv. Akad. Nauk SSSR, Neorg. Mater., 1986, vol. 22, no. 1, pp. 145–147.

    CAS  Google Scholar 

  16. Azhdarov, G.Kh., Kyazimzade, R.Z., and Mir-Bagirov, V.V., Acceptor Levels of Substitutional Copper in Ge1 − x Six Crystals, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1992, vol. 26, no. 2, pp. 553–556.

    CAS  Google Scholar 

  17. Kamiura, Y., Hoshimoto, F., Nobusada, T., and Yoneyama, S., Copper-Related Deep Acceptor in Quenched Germanium, J. Appl. Phys., 1984, vol. 56, no. 4, pp. 936–941.

    Article  CAS  Google Scholar 

  18. Skudnova, E.V., Degtyarev, V.F., and Prokof’eva, V.K., Heat Treatment of Germanium Doped with Copper and Oxygen, Izv. Akad. Nauk SSSR, Neorg. Mater., 1988, vol. 24, no. 2, pp. 198–201.

    CAS  Google Scholar 

  19. Gvelesiani, A.A., Degtyarev, V.F., and Skudnova, E.V., Effect of Heat Treatment on the Properties of Copper-Doped Germanium, Izv. Akad. Nauk SSSR, Neorg. Mater., 1987, vol. 23, no. 3, pp. 368–372.

    CAS  Google Scholar 

  20. Blakemore, J.S., Semiconductor Statistics, Oxford: Pergamon, 1962.

    Google Scholar 

  21. Hall, R.N. and Racette, J.H., Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon and Gallium Arsenide, J. Appl. Phys., 1964, vol. 33, no. 2, pp. 379–397.

    Article  Google Scholar 

  22. Kamiura, Y. and Hashimoto, F., Copper-Related Deep Acceptor in Quenched Germanium, Jpn. J. Appl. Phys., 1989, vol. 28, no. 5, pp. 753–769.

    Google Scholar 

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Authors and Affiliations

  1. Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan

    G. Kh. Azhdarov, V. K. Kyazimova & L. A. Huseynli

  2. Ganja State University, pr. shakha Ismaila Khatai 187, Ganja, AZ1000, Azerbaijan

    Z. M. Zeynalov

Authors
  1. G. Kh. Azhdarov
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  2. Z. M. Zeynalov
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  3. V. K. Kyazimova
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  4. L. A. Huseynli
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Correspondence to Z. M. Zeynalov.

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Original Russian Text © G.Kh. Azhdarov, Z.M. Zeynalov, V.K. Kyazimova, L.A. Huseynli, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 12, pp. 1418–1422.

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Azhdarov, G.K., Zeynalov, Z.M., Kyazimova, V.K. et al. Deep donor center in Ge1 − x Si x 〈Cu,In,Sb〉 crystals at 1050–1080 K. Inorg Mater 46, 1285–1289 (2010). https://doi.org/10.1134/S0020168510120022

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  • DOI: https://doi.org/10.1134/S0020168510120022

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