Abstract
Defect formation processes in silicon implanted with ∼1 MeV/nucleon boron, oxygen, and argon ions have been studied using microhardness and Hall effect measurements. The results indicate that ion implantation increases the surface strength of silicon single crystals owing to the formation of electrically inactive interstitials through the diffusion of self-interstitials from the implantation-damaged layer to the silicon surface. The radiation-induced surface hardening depends significantly on the nature of the ion, its energy, and the implant dose. In the case of low-Z (boron) ion implantation, the effect had a maximum at an implant dose of ∼5 × 1014 cm−2, whereas that for O+ and Ar+ ions showed no saturation even at the highest dose reached, 1 × 1016 cm−2. When the ion energy was increased to ∼3 MeV/nucleon (210-MeV Kr+ ion implantation), we observed an opposite effect, surface strength loss, due to the predominant generation of vacancy-type defects.
Similar content being viewed by others
References
Litvinov, Yu.M. and Litvinov, M.Yu., Continuous Indentation As a Tool for Mechanical Characterization of Semiconductor Materials, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2004, no. 4, pp. 11–16.
Golovin, Yu.I., Ivolgin, V.I., Korenkov, V.V., et al., Comprehensive Mechanical Characterization of Materials by Nanoindentation, Kondens. Sredy Mezhfaznye Granitsy, 2001, vol. 3, no. 2, pp. 122–135.
Brinkevich, D.I., Odzhaev, V.B., Prosolovich, V.S., and Yankovski, Yu.N., Formation of Radiation Defects in Silicon at High-Energy Implantation, Vacuum, 2005, vol. 78, pp. 251–254.
Zorin, E.I., Lisenkova, N.V., Pavlov, P.V., et al., Long-Range Effect of Ion Bombardment in “Oxygen-Free” Silicon, Fiz. Tverd. Tela (Leningrad), 1987, vol. 21, no. 5, pp. 904–910.
Kukushkin, S.A. and Kuz’michev, S.V., Mechanical-Load-Driven Evolution of Micropore Morphology in a Brittle Solid, Fiz. Tverd. Tela (S.-Peterburg), 2008, vol. 50, no. 8, pp. 1390–1394.
Pavlov, P.V., Tetelbaum, D.I., Skupov, V.D., et al., Abnormally Deep Structural Changes in Ion-Implanted Silicon, Phys. Status Solidi A, 1986, vol. 94, no. 1, pp. 395–402.
Vabishchevich, S.A., Vabishchevich, N.V., and Brinkevich, D.I., Microhardness of Silicon Wafers after Getter-Assisted Heat Treatment, Perspekt. Mater., 2005, no. 2, pp. 20–22.
Golovin, Yu.I., Dmitrievskii, A.A., and Suchkova, N.Yu., Structure of Complexes Responsible for Radiation-Induced Strength Degradation of Silicon, Fiz. Tverd. Tela (S.-Peterburg), 2006, vol. 48, no. 2, pp. 262–265.
Golovin, Yu.I. and Tyurin, A.I., Nondislocational Plasticity and Its Role in Mass Transport and Indent Formation in Dynamic Indentation, Fiz. Tverd. Tela (S.-Peterburg), 2000, vol. 42, no. 10, pp. 1818–1820.
Golovin, Yu.I., Dmitrievskii, A.A., Pushnin, I.A., and Suchkova, N.Yu., Reversible Changes in the Microhardness of Si Crystals under Irradiation with Low Electron Doses, Fiz. Tverd. Tela (S.-Peterburg), 2004, vol. 46, no. 10, pp. 1790–1792.
Vysotskaya, V.V., Gorin, S.N., and Sidorov, Yu.A., On the Nature of B-Defects in Silicon, Izv. Akad. Nauk SSSR, Neorg. Mater., 1990, vol. 26, no. 3, pp. 453–457.
Antonova, I.V., Neustroev, E.P., Popov, V.P., and Stas’, V.F., Effect of Medium-Energy Ion Implantation on the Generation of Donor Centers during Silicon Annealing between 300 and 600°C, Perspekt. Mater., 2001, no. 1, pp. 43–48.
Brinkevich, D.I., Prosolovich, V.S., Vabishchevich, S.A., and Petlitskii, A.N., Effect of Background Impurities on the Generation of Stacking Faults in Silicon Wafers, Mikroelektronika, 2006, vol. 35, no. 2, pp. 112–116.
Chelyadinskii, A.R., Varichenko, V.S., and Zaitsev, A.M., Spatial Distribution, Accumulation, and Annealing of Radiation-Induced Defects in Silicon Implanted with High-Energy Krypton and Xenon Ions, Fiz. Tverd. Tela (S.-Peterburg), 1998, vol. 40, no. 9, pp. 1627–1630.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.A. Vabishchevich, N.V. Vabishchevich, D.I. Brinkevich, V.S. Prosolovich, Yu.N. Yankovskii, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 12, pp. 1413–1417.
Rights and permissions
About this article
Cite this article
Vabishchevich, S.A., Vabishchevich, N.V., Brinkevich, D.I. et al. Defect formation in silicon implanted with ∼1 MeV/nucleon ions. Inorg Mater 46, 1281–1284 (2010). https://doi.org/10.1134/S0020168510120010
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168510120010