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Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions

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Abstract

n-ZnO/p-GaN:Mg heterostructures have been produced by the thermal oxidation of thin Zn layers using radical-beam gettering epitaxy. The structural and electroluminescent properties of the n-ZnO/p-GaN:Mg heterostructures have been studied.

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Authors and Affiliations

  1. Berdyansk State Pedagogical University, ul. Shmidta 4, Berdyansk, 71118, Ukraine

    I. V. Rogozin

  2. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Georgobiani & N. P. Datskevich

  3. Academy of Management and Information Technologies, ul. Uritskogo 3, Berdyansk, 71112, Ukraine

    M. B. Kotlyarevsky

Authors
  1. I. V. Rogozin
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  2. A. N. Georgobiani
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  3. M. B. Kotlyarevsky
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  4. N. P. Datskevich
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Correspondence to I. V. Rogozin.

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Original Russian Text © I.V. Rogozin, A.N. Georgobiani, M.B. Kotlyarevsky, N.P. Datskevich, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 11, pp. 1285–1289.

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Rogozin, I.V., Georgobiani, A.N., Kotlyarevsky, M.B. et al. Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions. Inorg Mater 46, 1161–1165 (2010). https://doi.org/10.1134/S0020168510110014

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  • DOI: https://doi.org/10.1134/S0020168510110014

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