Abstract
The structural perfection and surface morphology of sapphire substrates vacuum-annealed at atomic Si flux densities from 5 × 1015 to 1 × 1016 at/(cm2 s) have been studied by electron diffraction, X-ray diffraction, and atomic force microscopy. The results demonstrate that, after annealing in the range 1160–1330°C, the sapphire has a smooth, single-crystal surface, which enables the growth of twin-free silicon epilayers at 600–700°C.
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References
Papkov, V.S. and Tsybul’nikov, M.B., Epitaksial’nye kremnievye sloi na dielektricheskikh podlozhkakh i pribory na ikh osnove (Silicon Epilayers on Insulating Substrates and Related Devices), Moscow: Energiya, 1979.
Golecki, I., The Current Status of Silicon-on-Sapphire and Other Heteroepitaxial Silicon-on-Insulator Technologies, Comparison of Thin Film Transistor and SOI Technologies, Lam, H.W. and Thompson, M.J., Eds., Amsterdam: North-Holland, 1984, pp. 3–23.
Vasudev, P.K., Solid Phase Epitaxial Recrystallization of SOS, with Applications to Submicrometer CMOS and Bipolar Devices, Semiconductor-on-Insulator and Thin Film Transistor Technology, Chiang, A. et. al., Eds., Materials Research Soc., 1986, pp. 121–127.
Chang, C.C., Silicon-on-Sapphire Epitaxy by Vacuum Sublimation: LEED-Auger Studies and Electronic Properties of the Films, J. Vac. Sci. Technol., 1971, vol. 8, p. 500.
Ignatkov, V.D., Kosenko, V.E., Klochkov, V.N., et al., Silicon Heteroepitaxy on Sapphire: 1. Crystal Structure and Growth Mechanism, Ukr. Fiz. Zh., 1971, vol. 16, no. 6, pp. 927–933.
Bean, J.C., Growth of Thin Silicon Films on Sapphire and Spinel by Molecular Beam Epitaxy, Appl. Phys. Lett., 1980, vol. 36, pp. 741–743.
Richmond, E.D., MBE-Grown Silicon on Sapphire (1\( \bar 1 \)02), Thin Solid Films, 1990, no. 192, pp. 287–294.
Richmond, E.D., Twigg, M.E., Qadri, S., et al., Molecular Beam Epitaxy versus Chemical Vapor Deposition of Silicon on Sapphire, Appl. Phys. Lett., 1990, vol. 56, no. 25, pp. 2551–2553.
Smul’skii, A.S., Ital’yantsev, A.G., Avdeev, I.I., and Mordkovich, V.N., Heat Treatment of Silicon and Elimination of Its Structural Defects in Semiconductor Device and IC Fabrication, Elektron. Tekh., Ser. Poluprovodn. Prib., 1983, no. 3 (162), pp. 62–67.
Klochkov, V.P., Kosenko, V.E., and Stadnik, A.V., Perfect Single-Crystal Silicon Films on Sapphire, Ukr. Fiz. Zh. (Russ. Ed.), 1968, vol. 13, no. 4, pp. 664–668.
Svetlov, S.P., Shengurov, V.G., Tolomasov, V.A., et al., Apparatus for Sublimation-Source Silicon Molecular Beam Epitaxy, Prib. Tekh. Eksp., 2001, no. 5, pp. 137–140.
Shengurov, V.G., Svetlov, S.P., Tolomasov, V.A., and Chalkov, V.Yu., Ultrahigh-Vacuum Substrate Heater, Prib. Tekh. Eksp., 2004, no. 5, p. 158.
Denisov, S.A., Svetlov, S.P., Chalkov, V.Yu., et al., Structural Perfection of Heteroepitaxial Silicon Layers Grown on Sapphire by Sublimation-Source Molecular Beam Epitaxy, Neorg. Mater., 2007, vol. 43, no. 4, pp. 391–398 [Inorg. Mater. (Engl. Transl.), vol. 43, no. 4, pp. 331–337].
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Original Russian Text © S.A. Denisov, V.Yu. Chalkov, V.G. Shengurov, S.P. Svetlov, D.A. Pavlov, E.A. Pitirimova, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 7, pp. 773–782.
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Denisov, S.A., Chalkov, V.Y., Shengurov, V.G. et al. Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy. Inorg Mater 46, 693–702 (2010). https://doi.org/10.1134/S0020168510070010
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DOI: https://doi.org/10.1134/S0020168510070010