Abstract
The resistivity, Hall coefficient, and magnetoresistance ratio of the ferromagnetic semiconductor Cd0.7Mn0.3GeAs2 have been measured as functions of pressure, temperature, and magnetic field. The ρ(p) and R H(p) curves point to a structural insulator-metal phase transition under both increasing and decreasing pressure. The temperature dependences of ρ and R H show anomalies, which are interpreted as a ferromagnetic-paramagnetic phase transition. Cd0.7Mn0.3GeAs2 is shown for the first time to have a negative magnetoresistance under pressure.
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Novotortsev, V.M., Kalinnikov, V.T., Koroleva, L.I., et al., CdGeAs2“Mn”: A High-Temperature Ferromagnetic Semiconductor, Zh. Neorg. Khim., 2005, vol. 50, no. 4, pp. 552–556.
Medvedkin, G.A., Ishibashi, T., Nishi, T., and Sato, K., Cd1 − x MnxGeP2: A New Magnetic Semiconductor, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2001, vol. 35, no. 3, pp. 305–308.
Marenkin, S.F, Morozova, V.A., Ochertyanova, L.I., et al., Crystal Growth of Manganese-Doped CdGeAs2, Khim. Tekhnol., 2005, no. 12, pp. 5–7.
Khvostantsev, L.G., Vereshagin, L.P., and Novikov, A.P., Device of Toroid Type for High Pressures Generation, High Temp.-High Pressures, 1977, vol. 9, no. 6, pp. 637–639.
Mollaev, A.Yu., Saipulaeva, L.A., Arslanov, R.K., and Marenkin, S.F., Effect of Hydrostatic Pressure on the Transport Properties of Cadmium Diarsenide Crystals, Neorg. Mater., 2001, vol. 37, no. 4, pp. 405–408 [Inorg. Mater. (Engl. Transl.), vol. 37, no. 4, pp. 327–330].
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Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, U.Z. Zalibekov, T.R. Arslanov, E.S. Ibaev, V.M. Novotortsev, S.F. Marenkin, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 6, pp. 645–648.
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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Pressure, temperature, and magnetic-field effects on the transport properties of Cd0.7Mn0.3GeAs2 . Inorg Mater 46, 571–573 (2010). https://doi.org/10.1134/S0020168510060014
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DOI: https://doi.org/10.1134/S0020168510060014