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Electrical and optical properties of manganese-doped (3HgSe)1 − x (Al2Se3) x crystals

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Abstract

The transport and optical properties of (3HgSe)1 − x (Al2Se3) x 〈Mn〉 crystals have been studied, and their energy-band parameters have been determined. The transport measurements were made by a four probe method in the ranges T = 77–300 K and H = 40–400 kA/m; transmission was measured at 300 K. The Hall coefficient of the crystals is temperature-independent, their electrical conductivity shows metallic behavior and is a nearly linear function of temperature, and their thermoelectric power increases with temperature. Optical data attest to direct allowed interband optical transitions and suggest that the electrons in the crystals are scattered predominantly by ionized impurities. The energy-band parameters are determined and are used to construct the energy-band diagram of the crystals.

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Authors and Affiliations

  1. Fed’kovich National University, ul. Kotsyubinskogo 2, Chernovtsy, 58012, Ukraine

    P. D. Maryanchuk & D. P. Kozyarskii

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  1. P. D. Maryanchuk
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  2. D. P. Kozyarskii
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Correspondence to P. D. Maryanchuk.

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Original Russian Text © P.D. Maryanchuk, D.P. Kozyarskii, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 5, pp. 528–531.

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Maryanchuk, P.D., Kozyarskii, D.P. Electrical and optical properties of manganese-doped (3HgSe)1 − x (Al2Se3) x crystals. Inorg Mater 46, 460–463 (2010). https://doi.org/10.1134/S0020168510050043

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  • DOI: https://doi.org/10.1134/S0020168510050043

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