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Electrical properties of p-Zn1 − x Cd x GeAs 2 〈Mn〉

Abstract

The electrical resistivity and Hall coefficient of the high-temperature ferromagnetic semiconductor p-Zn1 − x Cd x GeAs2〈Mn〉 have been measured as a function of pressure near room temperature. The features in the curves obtained attest to a structural phase transition at particular pressures. With increasing manganese content, the phase transition shifts to lower pressure. The features observed in the pressure-dependent Hall coefficient of the crystals containing more than 0.06 wt % manganese, in which ferromagnetic behavior is more pronounced, are probably due to the anomalous component of the Hall effect and its modulation in the presence of narrow impurity bands.

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References

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Author information

Correspondence to A. Yu. Mollaev.

Additional information

Original Russian Text © A.Yu. Mollaev, L.A. Saipulaeva, S.F. Marenkin, A.G. Alibekov, A.A. Abdullaev, I.V. Fedorchenko, 2010, published in Neorganicheskie Materialy, 2010, Vol. 46, No. 5, pp. 517–519.

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Mollaev, A.Y., Saipulaeva, L.A., Marenkin, S.F. et al. Electrical properties of p-Zn1 − x Cd x GeAs 2 〈Mn〉. Inorg Mater 46, 449–451 (2010). https://doi.org/10.1134/S0020168510050018

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Keywords

  • Electrical Resistivity
  • Structural Phase Transition
  • Hall Coefficient
  • Manganese Concentration
  • Ferromagnetic Behavior