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Doped anodic oxide films obtained on silicon and silicon compounds: Preparation, properties, and application

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Inorganic Materials Aims and scope

Abstract

The physicochemical fundamentals of electronics based on doped anodic oxide films (AOFs) obtained on silicon and silicon compounds are considered.

The achievements in the employment of phosphorus and boron AOFs in semiconductor electronics and their prospects are briefly outlined.

The findings of investigations into growth kinetics, composition, structure, and properties of AOFs obtained on silicon, silicon carbide, and Si3N4 are summarized; the same is done for thermal and anodic oxides grown on silicon in electrolytes based on ethylene glycol (EG) and tetrahydrofurfuryl alcohol (THFA) containing H3AsO4, H3PO4, and H3BO3 as dopants.

The prerequisites for the development of a theory about the formation of doped AOFs on silicon and silicon compounds are established; AOFs hold the greatest promise for an application in solving various problems of micro- and nanotechnology.

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    L. P. Mileshko

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Mileshko, L.P. Doped anodic oxide films obtained on silicon and silicon compounds: Preparation, properties, and application. Inorg Mater 45, 1494–1510 (2009). https://doi.org/10.1134/S0020168509130044

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