Abstract
Temperature-gradient growth of GaInAs〈Bi〉 layers on InAs substrates has been studied, and distribution coefficients in the Ga-In-As-Bi system have been determined. Data are presented on the influence of temperature, temperature gradient, and melt composition on the quality of the epilayers.
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Original Russian Text © L.S. Lunin, I. A. Sysoev, L.V. Blagina, A.V. Blagin, A.A. Barannik, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 8, pp. 908–912.
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Lunin, L.S., Sysoev, I.A., Blagina, L.V. et al. Temperature-gradient growth kinetics and macrodefects of GaInAs〈Bi〉/InAs heterostructures. Inorg Mater 45, 841–845 (2009). https://doi.org/10.1134/S0020168509080020
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DOI: https://doi.org/10.1134/S0020168509080020