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Compensation mechanism for hole conduction in ZnO:N films

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Abstract

One possible compensation mechanism for hole conduction in ZnO:N crystals has been examined using the quasi-chemical approach. The results indicate that, under equilibrium annealing or growth conditions, p-type ZnO:N crystals are difficult to obtain because holes are compensated by V O vacancies and (V O − NO)· defect complexes. The theoretical predictions correlate with experimental data.

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Authors and Affiliations

  1. Berdyansk State Pedagogical University, ul. Shmidta 4, Berdyansk, 71118, Ukraine

    I. V. Rogozin

  2. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Georgobiani

  3. Academy of Management and Information Technologies, ul. Uritskogo 3, Berdyansk, 71112, Ukraine

    M. B. Kotlyarevsky & A. V. Marakhovskii

Authors
  1. I. V. Rogozin
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  2. A. N. Georgobiani
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  3. M. B. Kotlyarevsky
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  4. A. V. Marakhovskii
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Correspondence to I. V. Rogozin.

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Original Russian Text © I.V. Rogozin, A.N. Georgobiani, M.B. Kotlyarevsky, A.V. Marakhovskii, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 4, pp. 440–448.

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Rogozin, I.V., Georgobiani, A.N., Kotlyarevsky, M.B. et al. Compensation mechanism for hole conduction in ZnO:N films. Inorg Mater 45, 391–398 (2009). https://doi.org/10.1134/S0020168509040116

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