Abstract
It is established that, during the formation of anodic P- or As-doped SiO2 films on p-Si in an ethylene glycol + 0.13% H2O solution containing 14.3% H3PO4, 0.17% HNO3, and 0.0193–1.95% H3AsO4 additives, the orthophosphoric and orthoarsenic acids do not produce any combined effect upon the process of introduction of the arsenate and phosphate anions into silicon dioxide. It is suggested that the partial anodic reactions of Si with NO −3 , OH−, AsO 3−4 , and PO 3−4 proceed with the formation of SiO2 involving As2O3, As, As2O5, P2O5, and P.
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Mileshko, L. P. and Varzarev, Yu. N., Anodic oxidation of silicon in arsenate electrolytes based on ethylene glycol, Fiz. Khim. Obrab. Mater., 2004, no. 6, pp. 43–47.
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Original Russian Text © L.P. Mileshko, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 3, pp. 300–301.
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Mileshko, L.P. Simultaneous doping of anodic silicon oxide films with phosphorus and arsenic. Inorg Mater 45, 258–259 (2009). https://doi.org/10.1134/S0020168509030078
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DOI: https://doi.org/10.1134/S0020168509030078