Abstract
The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplemented with plasmochemical action, and (3) magnetron deposition used for comparison purposes. It is shown that a nanometer tungsten silicide W5Si3 layer is formed at the tungsten-silicon interface only under gas-phase deposition. The effect of annealing on the specimen composition and surface resistance is investigated. It is shown that the formation and growth of a silicide WSi2 layer commences at 700°C for CVD films and at above 750°C for films obtained with plasmochemical deposition; this results in a drastic increase in their electrical resistance. Under optimal conditions, tungsten films of 8 × 10 −6 Ω cm resistivity are produced.
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Original Russian Text © S.V. Plyushcheva, G.M. Mikhailov, L.G. Shabel’nikov, S.Yu. Shapoval, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 2, pp. 176–180.
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Plyushcheva, S.V., Mikhailov, G.M., Shabel’nikov, L.G. et al. Tungsten thin-film deposition on a silicon wafer: The formation of silicides at W-Si interface. Inorg Mater 45, 140–144 (2009). https://doi.org/10.1134/S002016850902006X
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DOI: https://doi.org/10.1134/S002016850902006X