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Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy

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Abstract

The kinetics of growth of HgTe films under conditions of molecular beam epitaxy on the (310)- and (100)-oriented CdTe buffer layers is studied by ellipsometry. It is established that the minimum pressure of Hg vapors required for growth of HgTe films on the (310) surface is four times lower than the pressure required for growth on the (100) surface. It is found that, during the growth of HgTe films, no Te adsorption layer is formed on the (310) surface, whereas a Te adsorption layer is actually formed on the (100) surface. The equivalent thickness of this layer is 1 Å.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    M. V. Yakushev, A. A. Babenko & Yu. G. Sidorov

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  1. M. V. Yakushev
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  2. A. A. Babenko
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  3. Yu. G. Sidorov
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Original Russian Text © M.V. Yakushev, A.A. Babenko, Yu.G. Sidorov, 2009, published in Neorganicheskie Materialy, 2008, Vol. 45, No. 1, pp. 15–20.

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Yakushev, M.V., Babenko, A.A. & Sidorov, Y.G. Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy. Inorg Mater 45, 13–18 (2009). https://doi.org/10.1134/S0020168509010038

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  • DOI: https://doi.org/10.1134/S0020168509010038

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