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Effect of flash lamp annealing on solid-state reactions in (111)Si-Ni-Pt heterostructures

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Abstract

The effects of flash annealing with xenon arc lamps (λ = 200–1200 nm) and isothermal annealing for 30 min on the phase composition, orientation, and substructure of Pt(25 nm)-Ni(20 nm)-(111)Si(0.38 mm)-Ni(20 nm)-Pt(25 nm) heterostructures have been studied by transmission electron microscopy. The results indicate that solid-state reactions proceed more rapidly on the side under irradiation in comparison with the opposite side. Flash lamp annealing reduces the temperature threshold for silicide formation by 100–150°C.

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Correspondence to V. M. Ievlev.

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Original Russian Text © V.M. Ievlev, S.A. Soldatenko, S.B. Kushchev, Yu.V. Gorozhankin, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 7, pp. 808–815.

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Ievlev, V.M., Soldatenko, S.A., Kushchev, S.B. et al. Effect of flash lamp annealing on solid-state reactions in (111)Si-Ni-Pt heterostructures. Inorg Mater 44, 705–712 (2008). https://doi.org/10.1134/S0020168508070066

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  • DOI: https://doi.org/10.1134/S0020168508070066

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