Abstract
The effects of flash annealing with xenon arc lamps (λ = 200–1200 nm) and isothermal annealing for 30 min on the phase composition, orientation, and substructure of Pt(25 nm)-Ni(20 nm)-(111)Si(0.38 mm)-Ni(20 nm)-Pt(25 nm) heterostructures have been studied by transmission electron microscopy. The results indicate that solid-state reactions proceed more rapidly on the side under irradiation in comparison with the opposite side. Flash lamp annealing reduces the temperature threshold for silicide formation by 100–150°C.
Similar content being viewed by others
References
Ellwanger, R.S., Morgan, A.E., Stacy, W.T., and Tamminga, J., The Schottky Barrier Height of Platinum Nickel Silicide, J. Vac. Sci. Technol., B, 1983, vol. 1, no. 3, pp. 533–539.
Lee, P.S., Pey, K.L., Mangelinch, D., et al., New Salicidation Technology with Ni(Pt) Alloy for MOSFETs, IEEE Electron Device Lett., 2001, vol. 22, pp. 568–572.
Mantovani, S., Nava, F., Nobili, C., et al., Pt-Ni Bilayers on n-Type Silicon: Metallurgical and Electrical Behavior, J. Appl. Phys., 1984, vol. 55, no. 4, pp. 899–908.
Finstad, T.G. and Nicolet, M-A., Silicide Formation with Bilayers of Pd-Pt, Pd-Ni, and Pt-Ni, J. Appl. Phys., 1979, vol. 50, no. 1, pp. 303–307.
Ottaviani, G., Tu, K.N., Chu, W.K., et al., NiSi Formation at the NiPt/Si System, J. Appl. Phys., 1982, vol. 53,no. 7, pp. 4903–4906.
Lee, P.S., Pey, K.L., Mangelinch, D., et al., Layer Inversion of Ni(Pt)Si on Mixed Phase Si Films, Electrochem. Solid-State Lett., 2002, vol. 5, no. 3, pp. G15–G17.
Ievlev, V.M., Shvedov, E.V., Soldatenko, S.A., et al., Silicide Formation during Isothermal Annealing of Thin Ni-Pt Solid-Solution Films and Pt-Ni Thin-Film Heterostructures on Silicon, Vestn. Voronezh. Gos. Tekh. Univ., Ser.: Materialoved., 2004, no. 1.15, pp. 34–38.
Murarka, S.P., Silicides for VLSI Applications, New York: Academic, 1983.
Lee, P.S., Pey, K.L., Mangelinch, D., et al., On the Morphological Changes of Ni-and Ni(Pt)-Silicides, J. Electrochem. Soc., 2005, vol. 152, no. 4, pp. G305–G308.
Shibata, T., Sigmon, T.N., Gibbons, J.E., and Regoline, J.L., Silicide Formation Using a Scanning CW Laser Beam, J. Electrochem. Soc., 1981, vol. 128,no. 5, pp. 637–652.
Tsaur, K.Y., Lian, Z.L., and Mayer, J.W., Ion-Beam-Induced Silicide Formation, Appl. Phys. Lett., 1979, vol. 34, no. 2, pp. 168–170.
Shibata, T., Gibbons, J.E., and Sigmon, T.N., Silicide Formation Using a Scanning CW Laser Beam, Appl. Phys. Lett., vol. 38, no. 7, pp. 566–569.
Saiton, S., Ishiwara, H., Asano, T., et al., Single Crystalline Silicide Formation, Jpn. J. Appl. Phys., 1981, vol. 20, no. 9, pp. 1649–1656.
Ievlev, V.M., Kushchev, S.B., and Zlobin, V.P., Structure and Composition of Silicides Produced by Flash Lamp Annealing of Pt on Si, Fiz. Khim. Obrab. Mater., 1986, no. 2, pp. 128–130.
Nylandsted Larsen, A., Chevallier, J., and Sorensen, T., Growth of Nickel Silicides on Silicon by Short Duration Incoherent Light Exposure, Funct. Mater., 1999, vol. 6, no. 5, pp. 920–925.
Ievlev, V.M., Kushchev, S.B., and Sanin, V.N., Solid-State Silicide Synthesis via Flash Lamp Annealing of Si-Me (Me = Pt, Pd, Ni, Mo, Ti) Heterosystems, Fiz. Khim. Obrab. Mater., 2002, no. 1, pp. 27–31.
Ievlev, V.M., Kushchev, S.B., Serbin, O.V., et al., Two-Side Flash Lamp Annealing of Me-Si Heterostructures, Vestn. Voronezh. Gos. Tekh. Univ., Ser.: Materialoved., 2001, no. 1.10, pp. 77–79.
Pilipenko, V.A., Bystrye termoobrabotki v tekhnologii SBIS (Rapid Thermal Annealing in VLSI Technology), Minsk: Tsentr BGU, 2004.
Ghozlene, H.B., Beaufrere, P., and Authier, A., Crystallography of PtSi Films on (001) Silicon, J. Appl. Phys., 1978, vol. 49, pp. 3998–4004.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.M. Ievlev, S.A. Soldatenko, S.B. Kushchev, Yu.V. Gorozhankin, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 7, pp. 808–815.
Rights and permissions
About this article
Cite this article
Ievlev, V.M., Soldatenko, S.A., Kushchev, S.B. et al. Effect of flash lamp annealing on solid-state reactions in (111)Si-Ni-Pt heterostructures. Inorg Mater 44, 705–712 (2008). https://doi.org/10.1134/S0020168508070066
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168508070066