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Oxide films on the surface of GaSe doped with Cd or Dy

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Inorganic Materials Aims and scope

Abstract

The oxide film formed on cleaved surfaces of cadmium-and dysprosium-doped GaSe single crystals during long-term storage (at least three years) in air was characterized by x-ray diffraction and atomic force microscopy. The results indicate that the electrical characteristics of photosensitive GaSe-based diode structures may be governed by the properties of the oxide film, which forms on gallium selenide surfaces in just several minutes after cleavage, rather than by the properties of the space charge region in the semiconductor.

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Authors and Affiliations

  1. Frantsevich Institute of Materials Science Problems (Chernovtsy Branch), National Academy of Sciences of Ukraine, ul. Vil’de 5, Chernovtsy, 58001, Ukraine

    S. I. Drapak, S. V. Gavrilyuk & Z. D. Kovalyuk

  2. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, Ukraine

    O. S. Litvin

Authors
  1. S. I. Drapak
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  2. S. V. Gavrilyuk
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  3. Z. D. Kovalyuk
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  4. O. S. Litvin
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Correspondence to S. I. Drapak.

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Original Russian Text © S.I. Drapak, S.V. Gavrilyuk, Z.D. Kovalyuk, O.S. Litvin, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 7, pp. 781–789.

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Drapak, S.I., Gavrilyuk, S.V., Kovalyuk, Z.D. et al. Oxide films on the surface of GaSe doped with Cd or Dy. Inorg Mater 44, 680–686 (2008). https://doi.org/10.1134/S0020168508070029

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  • DOI: https://doi.org/10.1134/S0020168508070029

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