Skip to main content
SpringerLink
Log in

Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

  • Published:
Inorganic Materials Aims and scope

Abstract

We have studied the properties of Si1 − x Ge x -based p-i-n structures and Schottky barriers in which the i-region had been produced via compensation with gold. The results demonstrate that the use of a guard ring in p-Si1 − x Ge x 〈Au〉 structures reduces the room-temperature reverse leakage current by two to three orders of magnitude. Such structures have sufficiently small reverse currents and a barrier on the order of 0.75 eV. p-Si1 − x Ge x 〈Au〉-based guard-ring structures are suitable for the fabrication of IR and nuclear detectors.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Bacho, I., Kalinka, G., Keletii, I., et al., Silicon-Germanium Hard X-ray Detectors, Prib. Tekh. Eksp., 1981, no. 2, p. 221.

  2. Saidov, M.S., Muminov, R.A., Mallaeva, V.T., et al., Li-Drifted Si1 − x Gex Detectors, At. Energ., 1994, vol. 76, no. 5, pp. 431–435.

    CAS  Google Scholar 

  3. Saidov, M.S., Muminov, R.A., Atabaev, I.G., et al., A New Class of Nuclear Detectors Based on Si1 − x Gex, At. Energ., 1996, vol. 81, no. 4, pp. 270–273.

    CAS  Google Scholar 

  4. Atabaev, I.G., Bulk Si1 − x Gex Single-and Poly-Crystals: A New Prospective Material for Electronics, Comput. Mater. Sci., 2001, vol. 21, no. 4, pp. 526–529.

    Article  CAS  Google Scholar 

  5. Ruzin, A., Marunko, S., and Gusakov, Y., Study of Bulk Grown Silicon-Germanium Radiation Detectors, J. Appl. Phys., 2004, vol. 95, no. 9, pp. 5081–5087.

    Article  CAS  Google Scholar 

  6. Ruzin, A., Marunko, S., Abrosimov, N.V., and Riemann, H., Dark Properties and Transient Current Response of Si0.95Ge0.05 n+p Devices, Nucl. Instrum. Methods Phys. Res., Sect. A, 2004, vol. 518, nos. 1–2, pp. 373–375.

    Article  CAS  Google Scholar 

  7. Atabaev, I.G., Matchanov, N.A., Saidov, D.Sh., et al., About Large Schottky Barrier Height in Nuclear Detectors on the Base of Si1 − x Gex Alloy, 7th Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Firenze, 2007.

  8. Jiang, R.L., Liu, J.L., Li, J., et al., Properties of Schottky Contact of Al on SiGe Alloys, Appl. Phys. Lett., 1996, vol. 68, no. 8, pp. 1123–1125.

    Article  CAS  Google Scholar 

  9. Azimov, S.A., Muminov, R.A., Shamirzaev, S.Kh., and Yafasov, A.Ya., Kremnii-litievye detektory yadernogo izlucheniya (Si(Li) Nuclear Detectors), Tashkent: Fan, 1981.

    Google Scholar 

  10. Kozhukh, M.L., Belokurova, I.N., Vakhrushev, S.B., and Trunov, V.A., Si1 − x Gex Solid Solutions As Materials for Thermal Neutron Monochromators, Pis’ma Zh. Tekh. Fiz., 1979, vol. 5, no. 11, p. 686.

    Google Scholar 

  11. Erko, A., Abrosimov, N.V., and Alex, S.V., Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics, J. Cryst. Res. Technol., 2002, vol. 37, no. 7, pp. 685–704.

    Article  CAS  Google Scholar 

  12. Emel’yanov, A.M., Sobolev, N.A., Mel’nikova, T.M., and Abrosimov, N.V., Radiative Interband Recombination Mechanism in Si-Ge Solid Solutions, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2005, vol. 39, no. 10, pp. 1170–1172.

    Google Scholar 

  13. People, R., Indirect Band Gap of Coherently Strained GexSi1 − x Bulk Alloys on 〈001〉 Substrates, Phys. Rev. B: Condens. Matter Mater. Phys., 1985, vol. 32, no. 2, pp. 1405–1408.

    CAS  Google Scholar 

  14. Wollweber, J., et al., Minority Carrier Lifetime Improvement by Gettering in Si1 − x Gex Crystals, 13th Eur. Photovoltaic Solar Energy Conf., France, 1995, pp. 1239–1241.

  15. Sarkisov, A.A., Yakimov, V.A., and Kaplar, E.P., Termoelektricheskie generatory s yadernymi istochnikami teploty (Radioisotope Thermoelectric Generators), Moscow: Energoatomizdat, 1987.

    Google Scholar 

  16. Kurnosov, A.I. and Yudin, V.V., Tekhnologiya proizvodstva poluprovodnikovykh priborov (Technology of Semiconductor Devices), Moscow: Vysshaya Shkola, 1974.

    Google Scholar 

  17. Boltaks, B.I. and Bakhadyrkhanov, M.K., Kompensirovannyi kremnii (Compensated Silicon), Leningrad: Nauka, 1972, pp. 94–96.

    Google Scholar 

  18. Matchanov, N.A., Preparation of High-Resistivity Gold-Compensated p-Si1 − x Gex Crystals, Uzb. Fiz. Zh., 2004, vol. 6, no. 6, pp. 45–48.

    Google Scholar 

  19. Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981, 2nd ed.

    Google Scholar 

  20. Rappich, J. and Dittrich, Th., Electrochemical Passivation of Si and SiGe Surfaces, Thin Films, 2002, vol. 29, pp. 135–265.

    Article  CAS  Google Scholar 

  21. Makhnii, V.P. and Mel’nik, V.V., Zinc-Selenide-Based Surface-Barrier Diode with a Passivating Zinc Oxide Layer, Pis’ma Zh. Tekh. Fiz., 2003, vol. 29, no. 17, pp. 24–27.

    Google Scholar 

  22. Matchanov, N.A., Fabrication of p-Si1 − x Gex〈Au〉-Based Device Structures, Uzb. Fiz. Zh., 2005, vol. 7, no. 1, pp. 57–60.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Fizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, Uzbekistan

    I. G. Atabaev, N. A. Matchanov, E. N. Bakhranov & M. U. Khazhiev

Authors
  1. I. G. Atabaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. A. Matchanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. N. Bakhranov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. U. Khazhiev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. G. Atabaev.

Additional information

Original Russian Text © I.G. Atabaev, N.A. Matchanov, E.N. Bakhranov, M.U. Khazhiev, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 7, pp. 775–780.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Atabaev, I.G., Matchanov, N.A., Bakhranov, E.N. et al. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers. Inorg Mater 44, 675–679 (2008). https://doi.org/10.1134/S0020168508070017

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168508070017

Keywords

Search

Navigation