Abstract
We have studied the effect of the nitrogen/argon ratio in the gas mixture on the growth of films via reactive rf magnetron sputtering of a TaB2 target in Ar + N2 and the electrical and mechanical properties of the nanostructured films produced at different nitrogen contents in the Ta-B-N system. The results demonstrate that even small nitrogen additions prevent preferential orientation and columnar growth. No ternary compounds are formed during reactive rf magnetron sputtering of a TaB2 target in Ar + N2.
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Original Russian Text © A.A. Goncharov, V.V. Petukhov, V.A. Stupak, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 5, pp. 575–579.
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Goncharov, A.A., Petukhov, V.V. & Stupak, V.A. Preparation of manostructured Ta-B-N films. Inorg Mater 44, 500–503 (2008). https://doi.org/10.1134/S0020168508050129
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DOI: https://doi.org/10.1134/S0020168508050129