Abstract
We have studied the effect of Gd doping on the electrical properties of extruded Bi85Sb15 in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in Bi85Sb15 and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded Bi85Sb15.
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Original Russian Text © G.D. Abdinova, G.Z. Bagieva, M.M. Tagiev, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 4, pp. 474–476.
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Abdinova, G.D., Bagieva, G.Z. & Tagiev, M.M. Electrical properties of extruded Gd-doped Bi85Sb15 . Inorg Mater 44, 406–408 (2008). https://doi.org/10.1134/S0020168508040146
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DOI: https://doi.org/10.1134/S0020168508040146