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Interaction of cadmium vapor with the surface of Cd x Hg1−x Te layers during molecular beam epitaxial growth on GaAs substrates

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Abstract

We have studied reactions of cadmium vapor with the surface of Cd x Hg1−x Te layers growing on (310) and (100) GaAs substrates. The results indicate that cadmium substitutes for mercury atoms in the surface layer. Diatomic tellurium molecules arriving at the (310) surface dissociate more rapidly in comparison with the (100) surface.

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References

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. A. Babenko, D. V. Brunev, Yu. G. Sidorov, V. A. Shvets & M. V. Yakushev

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  1. A. A. Babenko
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  2. D. V. Brunev
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  3. Yu. G. Sidorov
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  4. V. A. Shvets
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  5. M. V. Yakushev
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Correspondence to A. A. Babenko.

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Original Russian Text © A.A. Babenko, D.V. Brunev, Yu.G. Sidorov, V.A. Shvets, M.V. Yakushev, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 4, pp. 431–435.

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Babenko, A.A., Brunev, D.V., Sidorov, Y.G. et al. Interaction of cadmium vapor with the surface of Cd x Hg1−x Te layers during molecular beam epitaxial growth on GaAs substrates. Inorg Mater 44, 366–370 (2008). https://doi.org/10.1134/S0020168508040079

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  • DOI: https://doi.org/10.1134/S0020168508040079

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