Abstract
Nanostructured yttrium oxysulfide films have been prepared via vapor phase growth. The first step was the deposition of 50-nm-thick nanostructured yttria films from yttrium dipivaloylmethanate vapor at 525°C. Next, the films were sulfided in ammonium thiocyanate vapor at temperatures from 800 to 1100°C. Hexagonal yttrium oxysulfide was obtained at 900°C and higher temperatures. The films consisted of densely packed grains about 50 nm in size.
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Nazarov, M., Kang, J.H., Jeon, D.Y., et al., Synthesis and Luminescent Performances of Some Europium Activated Yttrium Oxide Based Systems, Opt. Mater., 2005, vol. 27, no. 10, pp. 1587–1592.
Dhanaraj, J., Geethalakshmi, M., Jagannathan, R., and Kutty, T.R.N., Eu3+ Doped Yttrium Oxysulfide Nanocrystals—Crystallite Size and Luminescence Transitions, Chem. Phys. Lett., 2004, vol. 387, nos. 1–3, pp. 23–28.
Flores-Gonzalez, M.A., Ledoux, G., Roux, S., et al., Preparing Nanometer Scaled Tb-Doped Y2O3 Luminescent Powders by the Polyol Method, Solid State Chem., 2005, vol. 178, no. 4, pp. 989–997.
Bakovets, V.V., Levashova, T.M., Ratushnyak, V.T., and Bakhturova, L.F., Chemical Vapor Deposition of Y2O3 Films Using Y(dpm)3, Neorg. Mater., 2002, vol. 38, no. 4, pp. 458–461 [Inorg. Mater. (Engl. Transl.), vol. 38, no. 4, pp. 371–373].
Trushnikova, L.N., Kamarzin, A.A., Sheludyakova, L.A., et al., Fizika i khimiya redkozemel’nykh poluprovodnikov (Physics and Chemistry of Rare-Earth Semiconductors), Novosibirsk: Nauka, 1990, pp. 150–154.
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Original Russian Text © V.V. Bakovets, T.M. Levashova, I.Yu. Filatova, E.A. Maksimovskii, A.E. Kupcha, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 1, pp. 73–75.
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Bakovets, V.V., Levashova, T.M., Filatova, I.Y. et al. Vapor phase growth of nanostructured yttrium oxysulfide films. Inorg Mater 44, 67–69 (2008). https://doi.org/10.1134/S0020168508010111
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DOI: https://doi.org/10.1134/S0020168508010111