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Cobalt diffusion during doping of ZnSe single crystals

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Abstract

Cobalt diffusion into single crystals of the compound semiconductor ZnSe has been studied under the conditions of the S ZnSe-S CoSe-L Zn-V phase equilibrium at temperatures from 700 to 970°C, and the diffusion coefficients of cobalt in (100)-and (111)-oriented single-crystal samples of zinc selenide have been determined as functions of temperature. The diffusion rate of cobalt along the [111] direction is shown to exceed that along [100].

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119333, Russia

    N. N. Il’ichev & S. E. Mosaleva

  2. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    P. V. Shapkin & A. S. Nasibov

Authors
  1. N. N. Il’ichev
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  2. P. V. Shapkin
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  3. A. S. Nasibov
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  4. S. E. Mosaleva
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Corresponding author

Correspondence to A. S. Nasibov.

Additional information

Original Russian Text © N.N. Il’ichev, P.V. Shapkin, A.S. Nasibov, S.E. Mosaleva, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 10, pp. 1175–1178.

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Il’ichev, N.N., Shapkin, P.V., Nasibov, A.S. et al. Cobalt diffusion during doping of ZnSe single crystals. Inorg Mater 43, 1050–1053 (2007). https://doi.org/10.1134/S0020168507100044

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  • DOI: https://doi.org/10.1134/S0020168507100044

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