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Two-temperature synthesis of ZnGeP2

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Abstract

We describe a modified two-temperature process for reproducible high-volume (up to 500 g) synthesis of the nonlinear-optical semiconductor ZnGeP2, which enables the preparation of nominally stoichiometric material. The major reaction intermediates in the two-temperature ZnGeP2 synthesis are ZnP2, Zn3P2, GeP, and Ge. Using x-ray diffraction, we refined the interplanar spacings in the tetragonal structure of ZnGeP2 and fcc structure of GeP and indexed peaks missing in the PDF cards 33-1471 (ZnGeP2) and 21-353 (GeP).

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Authors and Affiliations

  1. Institute of Monitoring of Climatic and Ecological Systems, Siberian Division, Russian Academy of Sciences, Akademicheskii pr. 10/3, Tomsk, 634055, Russia

    G. A. Verozubova & A. I. Gribenyukov

  2. Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, Akademicheskii pr. 2/1, Tomsk, 634021, Russia

    Yu. P. Mironov

Authors
  1. G. A. Verozubova
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  2. A. I. Gribenyukov
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  3. Yu. P. Mironov
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Correspondence to G. A. Verozubova.

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Original Russian Text © G.A. Verozubova, A.I. Gribenyukov, Yu.P. Mironov, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 10, pp. 1164–1169.

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Verozubova, G.A., Gribenyukov, A.I. & Mironov, Y.P. Two-temperature synthesis of ZnGeP2 . Inorg Mater 43, 1040–1045 (2007). https://doi.org/10.1134/S0020168507100020

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  • DOI: https://doi.org/10.1134/S0020168507100020

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