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Microhardness of silicon layers grown by liquid phase epitaxy

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Abstract

The microhardness of silicon epilayers grown from Sn fluxes is found to be lower than that of the silicon substrates and to significantly depend on the crystallographic orientation of the substrates. The microhardness values follow a Gaussian distribution in all of the epilayers. Unintentional impurities are shown to have a significant effect on the microhardness of the epilayers. The addition of ytterbium to the high-temperature solution reduces the microhardness of the epilayers.

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Authors and Affiliations

  1. Belarussian State University, pr. Nezavisimosti 4, Minsk, 220030, Belarus

    D. I. Brinkevich & V. S. Prosolovich

  2. Polotsk State University, ul. Blokhina 29, Novopolotsk, 211440, Belarus

    S. A. Vabishchevich

Authors
  1. D. I. Brinkevich
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  2. S. A. Vabishchevich
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  3. V. S. Prosolovich
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Correspondence to D. I. Brinkevich.

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Original Russian Text © D.I. Brinkevich, S.A. Vabishchevich, V.S. Prosolovich, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 10, pp. 1159–1163.

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Brinkevich, D.I., Vabishchevich, S.A. & Prosolovich, V.S. Microhardness of silicon layers grown by liquid phase epitaxy. Inorg Mater 43, 1035–1039 (2007). https://doi.org/10.1134/S0020168507100019

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  • DOI: https://doi.org/10.1134/S0020168507100019

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