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Oxidation of thin films of zirconium and Zr-Ti solid solutions on single-crystal silicon

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Abstract

We have studied the oxidation of thin films of zirconium and Zr-Ti (1.2–2.03 at % Ti) solid solutions produced on single-crystal silicon wafers by magnetron sputtering. The films have been oxidized in flowing oxygen at temperatures from 473 to 673 K in a resistance furnace. The phase composition of the resultant oxide layers has been determined. Our results indicate that the oxidation kinetics of thin-film zirconium and Zr-based solid solutions are well represented by a linear-parabolic rate law. The composition, structure, and optical constants of the oxide layers depend on the heat-treatment conditions and the titanium content of the films.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    A. M. Khoviv & I. E. Shramchenko

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  1. A. M. Khoviv
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  2. I. E. Shramchenko
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Original Russian Text © A.M. Khoviv, I.E. Shramchenko, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 1, pp. 44–50.

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Khoviv, A.M., Shramchenko, I.E. Oxidation of thin films of zirconium and Zr-Ti solid solutions on single-crystal silicon. Inorg Mater 43, 40–45 (2007). https://doi.org/10.1134/S0020168507010104

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  • DOI: https://doi.org/10.1134/S0020168507010104

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