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Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates

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Abstract

The growth of thin GaN layers on single-crystal GaAs substrates during annealing in an atmosphere containing nitrogen atoms (radicals) has been analyzed in terms of a kinetic model. The nitridation of the surface of GaAs substrates has been studied by x-ray photoelectron spectroscopy. The results demonstrate that, at annealing temperatures below 500°C, both Ga-N and As-N bonds are formed on the substrate surface. Above 500°C, only Ga-N bonds are formed. The growth of GaN layers is shown to follow a quasi-epitaxial mechanism, in accordance with the proposed model.

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Authors and Affiliations

  1. Berdyansk State Pedagogical University, ul. Shmidta 4, Berdyansk, 71118, Ukraine

    I. V. Rogozin

  2. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Georgobiani

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  1. I. V. Rogozin
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  2. A. N. Georgobiani
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Original Russian Text © I.V. Rogozin, A.N. Georgobiani, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 12, pp. 1470–1476.

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Rogozin, I.V., Georgobiani, A.N. Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates. Inorg Mater 42, 1342–1347 (2006). https://doi.org/10.1134/S0020168506120107

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  • DOI: https://doi.org/10.1134/S0020168506120107

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