Abstract
We have studied a portion of the ternary system Pb-V-Te. Pseudobinary joins have been identified, the vanadium solubility along the V3Te4-PbTe join has been determined, and the lattice parameter of the solid solution has been measured as a function of vanadium content at 800 and 870°C. Six PbTe〈V〉 crystals have been grown by the Bridgman method, and their microstructure and transport properties have been investigated. The results indicate that vanadium in PbTe is not a simple donor: its effect depends on those growth conditions that determine the degree of compensation of the donor effect of vanadium and native defects. PbTe〈V〉 samples have been found to pass into a high-resistivity state on cooling and to be photosensitive. The depth of the vanadium donor level in the band gap of lead telluride has been evaluated.
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Original Russian Text © A.A. Vinokurov, S.G. Dorofeev, O.I. Tananaeva, A.I. Artamkin, T.A. Kuznetsova, V.P. Zlomanov, 2006, pubished in Neorganicheskie Materialy, 2006, Vol. 42, No. 12, pp. 1445–1453.
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Vinokurov, A.A., Dorofeev, S.G., Tananaeva, O.I. et al. Synthesis and properties of vanadium-doped lead telluride. Inorg Mater 42, 1318–1325 (2006). https://doi.org/10.1134/S0020168506120077
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DOI: https://doi.org/10.1134/S0020168506120077