Abstract
Thin GaN films have been grown on N+-ion-implanted single-crystal GaAs(111) substrates by radical-beam gettering epitaxy, and their structural perfection has been assessed by high-resolution x-ray diffraction. At growth temperatures from 770 to 970 K, the layers consist of hexagonal GaN and have mirror-smooth surfaces. Nitrogen-ion implantation into the substrate favors the formation of a sharp film/substrate interface owing to radiation-enhanced gallium diffusion. Analysis of the GaN/GaAs structures by Auger electron and x-ray photoelectron spectroscopies in combination with depth profiling indicates that the GaN layer is enriched in gallium. The N: Ga atomic ratio in the films is 0.98: 1, which is attributable to radiation-enhanced gallium diffusion.
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Oiginal Russian Text © A.N. Georgobiani, I.V. Rogozin, M.B. Kotlyarevsky, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 8, pp. 919–923.
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Georgobiani, A.N., Rogozin, I.V. & Kotlyarevsky, M.B. Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates. Inorg Mater 42, 830–834 (2006). https://doi.org/10.1134/S0020168506080048
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DOI: https://doi.org/10.1134/S0020168506080048