Abstract
The process of copper nanostructure formation on a silicon dioxide substrate was simulated using the molecular dynamics method. The process parameters corresponded to the conditions in a low-pressure gas-discharge plasma. The relationship between the nanostructure formation rate and the main plasma parameters was determined.
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This work was supported by the Russian Science Foundation, project no. 19-71-10055, https://rscf.ru/project/19-71-10055/.
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Fairushin, I.I., Shemakhin, A.Y. Simulation of Copper Nanostructure Formation on Silicon Dioxide Microsubstrate Surface. High Energy Chem 57 (Suppl 1), S41–S44 (2023). https://doi.org/10.1134/S001814392307010X
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DOI: https://doi.org/10.1134/S001814392307010X