Abstract
Aluminum nitride films have been obtained through magnetron sputtering of an aluminum target in an argon and nitrogen atmosphere on silicon and citall substrates. The study shows the effects of substrate temperature, nitrogen concentration, chamber pressure and sputtering power on the elemental composition of AlN films and surface morphology. The study has found that the Al/N ratio increases with the rising pressure in the chamber. The ratio decreases with rising substrate temperature and increasing power dissipated in the target. It has been proved that the roughness of the films increases with increasing discharge power, the operating pressure and the substrate temperature.
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ACKNOWLEDGMENTS
The authors thank S. Nesov, a scientist of the Laboratory of Physics of Nanomaterials and Heterostructures of the Omsk Scientific Center of the SB RAS, the scientists of the Central Research Center of VTAN NSU and the Tomsk Regional Center for Collective Use (CKP TSU) for the assistance in taking measurements.
Funding
The research was completed within the state assignment of Omsk Scientific Center of the Siberian Branch of the RAS (project state registration no. 121121700062-3).
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Baranova, L.V., Strunin, V.I., Baysova, B.T. et al. Phase Composition and Surface Morphology of Thin AlN Films Obtained trough Magnetron Sputtering. High Energy Chem 57 (Suppl 1), S7–S10 (2023). https://doi.org/10.1134/S0018143923070056
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DOI: https://doi.org/10.1134/S0018143923070056