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Investigation of the Plasma-Chemical Synthesis of Thin Ga2O3 Films Doped with Zn in One Step in Plasma

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Abstract

A process for fabricating Zn-doped (up to 10 at %) β-Ga2O3 thin films by plasma-enhanced chemical vapor deposition has been studied. High-purity gallium, zinc, and oxygen were used as starting materials, and hydrogen was chosen as the carrier and plasma gas. A low-temperature nonequilibrium RF (40.68 MHz) discharge plasma at a reduced pressure (0.01 torr) was used to initiate chemical reactions of precursors. The plasma-chemical process was monitored using optical emission spectroscopy. Structural properties and morphology of the deposited β-Ga2O3 films were studied by various methods.

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Funding

The study was supported by the Russian Science Foundation, project no. 22-13-00053 “Development of scientific foundations for the technology of obtaining chemoresistive materials for the electronic nose based on complex nanostructured oxide matrices.”

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod (National Research University), 603950, Nizhny Novgorod, Russia

    L. A. Mochalov, M. A. Kudryashov, I. O. Prokhorov, M. A. Vshivtsev, Yu. P. Kudryashova, E. A. Slapovskaya & A.V. Knyazev

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  1. L. A. Mochalov
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  2. M. A. Kudryashov
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  3. I. O. Prokhorov
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  4. M. A. Vshivtsev
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  5. Yu. P. Kudryashova
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  6. E. A. Slapovskaya
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  7. A.V. Knyazev
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Correspondence to I. O. Prokhorov.

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The authors declare no conflict of interest.

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Translated by S. Zatonsky

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Mochalov, L.A., Kudryashov, M.A., Prokhorov, I.O. et al. Investigation of the Plasma-Chemical Synthesis of Thin Ga2O3 Films Doped with Zn in One Step in Plasma. High Energy Chem 57, 509–514 (2023). https://doi.org/10.1134/S0018143923060115

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  • DOI: https://doi.org/10.1134/S0018143923060115

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