Abstract
Gallium monosulfide (GaS), a representative of Group III monochalcogenide layered materials, is a wide-bandgap semiconductor. It is considered an ideal material for light detectors in the blue and near ultraviolet ranges of the spectrum. In this work, for the first time, the method of plasma-enhanced chemical vapor deposition (PECVD) was applied to obtain thin GaS films on various substrates, where high-purity gallium and sulfur served as starting materials. To initiate the interaction between the reactants, a nonequilibrium RF discharge (40.68 MHz) plasma at a pressure of 0.1 torr was used. The influence of the substrate nature on the stoichiometry, structure, and surface morphology of GaS films has been studied. The plasma-chemical process was monitored using optical emission spectroscopy.
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REFERENCES
Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N., and Strano, M.S., Nat. Nanotechnol., 2012, vol. 7. № 11.P. 699.
Jung, C.S., Shojaei, F., Park, K., Oh, J.Y., Im, H.S., Jang, D.M., and Kang, H.S., ACS Nano, 2015, vol. 9, no. 10, p. 9585.
Haishuang, L., Yu, C., Kexin, Y., Yawei, K., Zhongguo, L., and Yushen, L., Front. Mater., 2021, vol. 8, p. 478.
Cuculescu, E., Evtodiev, I., Caraman, M., and Rusu, M., J. Optoelectron. Adv. Mater., 2006, vol. 8, no. 3, p. 1077.
Okamoto, N. and Tanaka, H., Mater. Sci. Semicond. Process., 1999, vol. 2, p. 13.
Jastrzebski, C., Olkowska, K., Jastrzebski, D.J., Wierzbicki, M., Gebicki, W., and Podsiadlo, S., J. Phys.: Condens. Matter, 2018, vol. 31, p. 075303.
Hu, P., Wang, L., Yoon, M., Zhang, J., Feng, W., Wang, X., and Xiao, K., Nano Lett., 2013, vol. 13, no. 4, p. 1649.
Gutiérrez, Y., Juan, D., Dicorato, S., Santos, G., Duwe, M., Thiesen, P.H., Giangregorio, M.M., Palumbo, F., Hingerl, K., Cobet, C., García-Fernández, P., Junquera, J., Moreno, F., and Losurdo, M., Opt. Express, 2022, vol. 30, no. 15, p. 27609.
Lieth, R.M.A. and van der Maesen, F., Phys. Status Solidi A, 1972, vol. 10, no. 1, p. 73.
Kipperman, A.H.M. and Vermij, C.J., Nuovo Cimento B, 1969, vol. 63, p. 29.
Wang, X., Sheng, Y., Chang, R.J., Lee, J.K., Zhou, Y., Li, S., and Warner, J.H., ACS Omega, 2018, vol. 3, no. 7, p. 7897.
Sanz, C., Guillén, C., and Gutiérrez, M.T., J. Phys. D: Appl. Phys., 2009, vol. 42, p. 085108.
Chen, X., Hou, X., Cao, X., Ding, X., Chen, L., Zhao, G., and Wang, X., J. Cryst. Growth, 1997, vol. 173, no. 1, p. 51.ó
Okamoto, N., Tanaka, H., and Hara, N., Jpn. J. Appl. Phys., 2001, vol. 40, no. 2, p. 104.
Mochalov, L., Logunov, A., Prokhorov, I., Vshivtsev, M., Kudryashov, M., Kudryashova, Y., Malyshev, V., Spivak, Y., Greshnyakov, E., Knyazev, A., Fukina, D., Yunin, P., and Moshnikov, V., Opt. Quantum Electron., 2022, vol. 54, p. 646.
Shirai, T., Reader, J., Kramida, A.E., and Sugar, J., J. Phys. Chem. Ref. Data, 2007, vol. 36, no. 2, p. 509.
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The study was supported by the Russian Science Foundation, project no. 22-19-20081, https://rscf.ru/project/22-19-20081/.
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Translated by S. Zatonsky
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Kudryashov, M.A., Mochalov, L.A., Prokhorov, I.O. et al. Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates. High Energy Chem 57, 532–536 (2023). https://doi.org/10.1134/S0018143923060097
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DOI: https://doi.org/10.1134/S0018143923060097