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Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions

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Abstract

FP9120 diazoquinone–novolac positive photoresist films 1.5 µm thick implanted with Ag+ ions and supported on the surface of KDB-10 (111) silicon wafers by centrifugation have been studied by measuring reflection spectra. It has been shown that ion implantation leads to a decrease in the refractive index of the photoresist due to radiation crosslinking of novolac resin molecules and a decrease in the density ρ and the molecular refraction RM of the photoresist. It has been established that the reflection coefficient in the opaque region of the photoresistive film increases with the Ag+ implantation dose. The changes observed in the optical properties of the films under ion implantation conditions are explained taking into account radiation-chemical processes in the phenol–formaldehyde photoresist.

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Funding

This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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Authors and Affiliations

  1. Institute of Nuclear Problems, Belarusian State University, 220006, Minsk, Belarus

    A. A. Kharchenko

  2. Belarusian State University, 220050, Minsk, Belarus

    D. I. Brinkevich, S. D. Brinkevich & V. S. Prosolovich

  3. OOO Moi Meditsinskii Tsentr–Vysokie Tekhnologii, 188640, Vsevolozhsk, Leningrad oblast, Russia

    S. D. Brinkevich

Authors
  1. A. A. Kharchenko
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  2. D. I. Brinkevich
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  3. S. D. Brinkevich
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  4. V. S. Prosolovich
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Correspondence to D. I. Brinkevich.

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Translated by V. Makhlyarchuk

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Kharchenko, A.A., Brinkevich, D.I., Brinkevich, S.D. et al. Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions. High Energy Chem 57, 498–503 (2023). https://doi.org/10.1134/S0018143923060061

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  • DOI: https://doi.org/10.1134/S0018143923060061

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