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High Energy Chemistry

, Volume 42, Issue 2, pp 132–136 | Cite as

Formation of microstructures on silicon surface in a fluorinated plasma via the cyclic etching-passivation process

  • I. I. AmirovEmail author
  • N. V. Alov
Plasma Chemistry

Abstract

The conditions and causes of formation of microneedles and columnar structures on the surface of silicon during deep anisotropic etching in an SF6/C4F8 plasma in the two-stage cyclic mode were determined. The appearance of microstructures is accelerated with an increase in the thickness of the fluorocarbon film formed on the silicon surface at the step of passivation in a C4F8 plasma and with an increase is the rate of etching the film in an SF6 plasma. By means of X-ray photoelectron spectroscopy, it was shown that the formation of carbon residues of fluorocarbon film etching on the Si surface is enhanced under these conditions. Building-up on the surface in the cyclic process, the residues as a micromasking coating lead to the formation of microneedles and columnar structures.

Keywords

Trench Silicon Surface High Energy Chemistry Columnar Structure Photoionization Cross Section 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  1. 1.Institute of Microelectronics and Information TechnologyRussian Academy of SciencesYaroslavlRussia
  2. 2.Moscow State UniversityLeninskie gory, MoscowRussia

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