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Polymer film deposition in inductively coupled radio-frequency discharge plasma of perfluorocyclobutane mixed with sulfur hexafluoride

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Abstract

The effect of an SF6 admixture on the rate of formation and the composition of a polymer film deposited on a substrate in low-pressure inductively coupled radiofrequency (RF) discharge plasma of C4F8 + SF6 under the ion bombardment of the surface was studied. As found by spectroscopic measurements, the relative concentration of CF ·2 and C ·2 radicals increased as the concentration of SF6 (<40%) in the mixture was increased. As demonstrated using X-ray photoelectron spectroscopy, the F/C ratio in the film decreased with the increasing amount of SF6 and RF bias power. The mechanism of the ion-enhanced growth of a fluorocarbon film is discussed.

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Authors and Affiliations

  1. Institute of Microelectronics and Informatics, Russian Academy of Sciences, ul. Universitetskaya 26, Yaroslavl, 150007, Russia

    I. I. Amirov

  2. Moscow State University, Leninskie gory, Moscow, 119992, Russia

    N. V. Alov

Authors
  1. I. I. Amirov
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  2. N. V. Alov
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Original Russian Text © I.I. Amirov, N.V. Alov, 2006, published in Khimiya Vysokikh Energii, 2006, Vol. 40, No. 4, pp. 311–316.

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Amirov, I.I., Alov, N.V. Polymer film deposition in inductively coupled radio-frequency discharge plasma of perfluorocyclobutane mixed with sulfur hexafluoride. High Energy Chem 40, 267–272 (2006). https://doi.org/10.1134/S0018143906040114

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  • DOI: https://doi.org/10.1134/S0018143906040114

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