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Model of ion diffusion in synaptic cleft based on stochastical integration of langevin equation at dielectric friction approximation

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Abstract

Changes in the state of the central nervous system, leading to the development of pathological processes, directly are associated with a state of neurons, particularly with their conductivity in synaptic cleft region. The synaptic flexibility plays a key role in environmental adaptation, which manifests in dynamic changes of synaptic properties. However more attention was paid rather to their functional, than physical-chemical properties. We present the results of simulation of potential determining ions in synaptic contact area using Langevin dynamics. Diffusion and self-diffusion coefficients were calculated. It is shown that the range of variability of the diffusion coefficient of ions in perimembrane space, caused by variable viscosity and dielectric conductivity of electrolyte can reach 20%. These physical-chemical synaptic parameters can be considered as relevant for synaptic flexibility.

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Authors and Affiliations

  1. “BioSim” Research Group, Moscow, 115211, Russia

    D. A. Turchenkov

  2. Institute of Cytochemistry and Molecular Pharmacology, Moscow, 115404, Russia

    S. E. Boronovsky & Ya. R. Nartsissov

Authors
  1. D. A. Turchenkov
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  2. S. E. Boronovsky
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  3. Ya. R. Nartsissov
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Correspondence to D. A. Turchenkov.

Additional information

Original Russian Text © D.A. Turchenkov, S.E. Boronovsky, Ya.R. Nartsissov, 2013, published in Biofizika, 2013, Vol. 58, No. 6, pp. 1013–1021.

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Turchenkov, D.A., Boronovsky, S.E. & Nartsissov, Y.R. Model of ion diffusion in synaptic cleft based on stochastical integration of langevin equation at dielectric friction approximation. BIOPHYSICS 58, 796–803 (2013). https://doi.org/10.1134/S0006350913060195

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