Abstract
A direct measurement of the in-plane birefringence below the absorption edge of a GaAs/AlAs superlattice (SL) under electric fields shows a unique type of electrooptical modulation. The SL is sandwiched between two doped AlGaAs alloy layers, which play the simultaneous role of positive (p +) and negative (n −) contacts, as well as clad layers, to achieve optical waveguiding. The p-(SL)-n structure is chosen so that, as a function of the externally applied bias, it displays Stark-ladder localization and the quantum confined Stark effect at low and high fields, respectively. We show that this results in an electrooptical modulation, in which the built-in birefringence of the SL initially decreases and shows a crossover to a quadratic increase for larger fields.
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From Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 71, No. 5, 2000, pp. 298–303.
Original English Text Copyright © 2000 by Etchegoin.
This article was submitted by the author in English.