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Magnetoresistance of lightly doped TmBa2Cu3Ox crystals. Reorientation of the antiferromagnetic structure in a magnetic field

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Abstract

The magnetoresistance of lightly doped TmBa2Cu3Ox single crystals is investigated in the temperature range 4.2–300 K for magnetic fields up to 12 T. For the antiferromagnetic sample (x=6.3), when the current and field lie in the ab plane, the magnetoresistance is the sum of an anisotropic and a background component. The existence of the anisotropic component is attributed to the restructuring of the antiferromagnetic domain structure in a magnetic field.

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Authors and Affiliations

  1. Institute of Inorganic Chemistry, Siberian Branch of the, Russian Academy of Sciences, Novosibirsk State University, 630090, Novosibirsk, Russia

    E. B. Amitin, A. G. Baikalov, A. G. Blinov, L. A. Boyarskii, V. Ya. Dikovskii, K. R. Zhdanov, M. Yu. Kameneva, L. P. Kozeeva & A. P. Shelkovnikov

Authors
  1. E. B. Amitin
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  2. A. G. Baikalov
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  3. A. G. Blinov
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  4. L. A. Boyarskii
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  5. V. Ya. Dikovskii
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  6. K. R. Zhdanov
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  7. M. Yu. Kameneva
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  8. L. P. Kozeeva
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  9. A. P. Shelkovnikov
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Additional information

Pis’ma Zh. Éksp. Teor. Fiz. 70, No. 5, 350–355 (10 September 1999)

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Amitin, E.B., Baikalov, A.G., Blinov, A.G. et al. Magnetoresistance of lightly doped TmBa2Cu3Ox crystals. Reorientation of the antiferromagnetic structure in a magnetic field. Jetp Lett. 70, 352–357 (1999). https://doi.org/10.1134/1.568179

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  • DOI: https://doi.org/10.1134/1.568179

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