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Optical properties of excitons in CdS semiconductor-insulator quantum wires

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Abstract

The characteristic features of the luminescence spectra of CdS semiconductor nanocrystals, crystallized in hollow channels in a dielectric template, are explained in terms of excitonic transitions in semiconductor-insulator quantum wires. The excitonic transition energies agree with the values calculated taking into account the effects of size quantization and the “dielectric enhancement of excitons” — the large increase in the electron-hole attraction as a result of the difference between the permittivities of the semiconductor and insulator. The theoretically computed binding energies of excitons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is shown that the excitonic transition energy is constant for a wide range of wire diameters.

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Pis’ma Zh. Éksp. Teor. Fiz. 70, No. 3, 216–220 (10 August 1999)

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Gavrilov, S.A., Gusev, V.V., Dneprovskii, V.S. et al. Optical properties of excitons in CdS semiconductor-insulator quantum wires. Jetp Lett. 70, 216–221 (1999). https://doi.org/10.1134/1.568155

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  • DOI: https://doi.org/10.1134/1.568155

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