Abstract
The weak-field Hall voltage in Si-MOS structures with different mobility is studied on both sides of the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, the Hall voltage is found to deviate by 6–20 % from its classical value. The deviation does not correlate with the strong temperature dependence of the diagonal resistivity ρ xx (T). In particular, the smallest deviation in R xy is found in the highest-mobility sample, which exhibits the largest variation in the diagonal resistivity ρ xx with temperature.
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Pis’ma Zh. Éksp. Teor. Fiz. 70, No. 1, 48–52 (10 July 1999)
Published in English in the original Russian journal. Edited by Steve Torstveit.
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Pudalov, V.M., Brunthaler, G., Prinz, A. et al. Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures. Jetp Lett. 70, 48–53 (1999). https://doi.org/10.1134/1.568128
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DOI: https://doi.org/10.1134/1.568128