Abstract
Experiments on Raman scattering in the “forward” geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model.
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Pis’ma Zh. Éksp. Teor. Fiz. 68, No. 1, 50–55 (10 July 1998)
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Ténné, D.A., Gaisler, V.A., Moshegov, N.T. et al. Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments. Jetp Lett. 68, 53–58 (1998). https://doi.org/10.1134/1.567820
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DOI: https://doi.org/10.1134/1.567820